利用气相化学反应法,在相对低的温度下,于自制石墨反应室中合成出二维半导体β-SiC纳米线网.该方法使用球磨及研磨混合后的Si和SiO2混合粉体及C3H6气体为原材料,通过调整基片与原料混合粉在石墨反应室的摆放位置、C3H6通入流量和时间、保温时间及其它工艺参数,可获得二维半导体β-SiC纳米线网.场发射扫描电镜、能量损失谱、X-Ray衍射、高分辨透射电镜结果表明:纳米线彼此相连形成二维纳米线网,并且纳米线的直径大约在20 nm～70nm左右.值得注意的是绝大多数纳米线网的连接点是由3根纳米线交汇而成.纳米线是具有立方结构的β-SiC,其生长方向是〈111〉,并且存在大量面缺陷.最后对这种新型二维SiC纳米线网的形成机理进行了探讨.
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