Nanostructured C-Cu thin films were deposited by reactive sputtering method and co-sputtering method. The relationships between microstructures, properties, and depo-sition parameters were studied and the results obtained from TEM, AFM, and XPS.indicate that the thin films are nanostructural, and have good in-depth uniformity. Theselected area electron diffraction (SAED) found that the nanosize Cu particles havethe fcc structure and the others are amorphous carbon or nanocrystallized graphiticcarbon. The peak positions of the Cu and C in XPS indicate them to be at the ele-mental state. In the IR transmission spectrum, diamond two-phonon absorption andgraphite Raman peaks were observed, which suggests microcrystal diamond particlesand graphite components exist in the C-Cu film. The higher electrical resistivity wasobtained.
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