本文就BMT陶瓷B位Ta非化学计量比对其烧结性、微观结构及微波分电性能的影响进行了研究．发现：（1）位Ta过量可促进BMT的烧结，而Ta缺量则阻碍其烧结．（2）B位离子有序度不仅同缺陷的数量有关，而且还同其缺陷类型有关．B位Ta缺陷的存在阻碍其有序度的提高．（3）BMT样品的Q·f值随Ta过量的增加而降低．相对介电常数则随之增加．
Sintering behavior, microstructure and microwave dielectric properties of the nonstoichiometric Ba(Mg1/3Ta2/3(1+x)O3 with --0.01≤ x≤0.01 were
investigated. The sintered density was improved by increasing Ta concentration. The ordering parameter S was not only related to the presence of defect in the specimen
but also sensitive to the type of defects. The presence of B-site vacancy might hinder the ordering procedure much more significantly than that of A-site vacancy. The
Q· f value decreased and the dielectric constant increased with the increase of tantalum contents.
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