铁电薄膜的性能与薄膜的择优取向和应力有密切的联系.采用X射线衍射( XRD)对3片不同自缓冲层条件下的Bi4Ti3O12(B1T)铁电薄膜进行了择优取向和应力分析,研究了自缓冲层影响择优取向和应力的机理.3片BIT薄膜的内应力均为张应力,并随着(200)峰与(117)峰相对强度的增强而变小,结果表明:a轴择优的BIT薄膜性能最好.
参考文献
| [1] | Fu LW;Liu K;Zhang B .Capacitance-voltage characteristics of Bi4 Ti34 O12 12/p-Si interface[J].Applied Physics Letters,1998,72(14):1784. |
| [2] | Park B H;Kang B S;Bu S D et al.Lanthanum-substituted bismuth titanate for use in non-volatile memories[J].Nature,1999,401:682. |
| [3] | Matsude H;Sachiko I;Takashi I .Design and ferroelectric properties of polar-axis-oriented polycrystalline Bi4-xPrxTi3O12 thick films on Ir/Si substrates[J].Applied Physics Letters,2003,83:5023. |
| [4] | Cheng Chuanpin;Tang Minghua;Ye Zhi et al.Microstructure and ferroelectric properties of dysprosium-doped bismuth titanate thin films[J].Materials Letters,2007,61:4117. |
| [5] | Yu Y H;Lai M O;Lu L et al.Measurement of residual stress of PZT thin film on Si(100) by synchrotron X-ray rocking curve technique[J].Journal of Alloys and Compounds,2008,449:56. |
| [6] | Spierings G A C M;Dormans G J M;Moors W G J et al.Stresses in Pt/Pb (Zr,Ti) O3/Pt thin-film stacks for integrated ferroelectrie capacitors[J].Journal of Applied Physics,1995,78:3. |
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