铝诱导晶化法(AIC)是一种低温制备大晶粒多晶硅薄膜的重要方法.本文分别基于Al/Al2O3/a-Si叠层和a-Si/SiOx/Al叠层制备了AIC多晶硅薄膜,前者表面粗糙,后者表面光滑.以后者为籽晶层,在其上用HWCVD法300℃低温下外延生长了表面形貌与籽晶层相似的多晶硅薄膜.铝诱导晶化过程中,在原始非晶硅层中会形成多晶硅、非晶硅和铝的混合层,去除铝后残留的硅将使表面粗糙,而在原始铝层中则形成连续的多晶硅薄膜.Al/Al2O3/a-Si 叠层和a-Si/SiOx/Al叠层的上层分别是非晶硅层和铝层,发生层交换后,前者上层是硅铝混合层,因此表面粗糙,后者上层是连续的多晶硅薄膜,因此表面光滑.在AIC多晶硅薄膜表面外延生长多晶硅薄膜等效于铝诱导多晶硅的晶核在垂直于薄膜方向上的继续生长,因此外延生长的薄膜与AIC多晶硅薄膜呈现相似的枝晶状形貌.
参考文献
| [1] | Jaeger C;Bator M;Matich S et al.Two-step Crystallization during the Reverse Aluminum-induced Layer Exchange Process[J].Journal of Applied Physics,2010,108:113513. |
| [2] | Peng C C;Chung C K;Lin J F .Effects of Al Film Thickness and Annealing Temperature on the Aluminum-induced Crystallization of Amorphous Silicon and Cartier Mobility[J].Acta Materialia,2011,59:6093. |
| [3] | 王宙,曹健,室谷贵之,付传起.铝诱导晶化真空蒸镀多晶硅薄膜的研究[J].功能材料,2012(05):573-575. |
| [4] | Per I. Widenborg;Axel Straub;Armin G. Aberle .Epitaxial thickening of AIC poly-Si seed layers on glass by solid phase epitaxy[J].Journal of Crystal Growth,2005(1/2):19-28. |
| [5] | Armin G. Aberle .Progress with polycrystalline silicon thin-film solar cells on glass at UNSW[J].Journal of Crystal Growth,2006(2):386-390. |
| [6] | Stradal J;Scholma G;Li H;van der Werf CHM;Rath JK;Widenborg PI;Campbell P;Aberle AG;Schropp REI .Epitaxial thickening by hot wire chemical vapor deposition of polycrystalline silicon seed layers on glass[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(1/2):335-337. |
| [7] | Large-Grain Polycrystalline Silicon Solar Cell on Epitaxial Thickening of AIC Seed Layer by Hot Wire CVD[J].IEEE Electron Device Letters,2010(1):38. |
| [8] | Bing-Rui Wu;Shih-Yung Lo;Dong-Sing Wuu;Sin-Liang Ou;Hsin-Yuan Mao;Jui-Hao Wang;Ray-Hua Horng .Direct growth of large grain polycrystalline silicon films on aluminum-induced crystallization seed layer using hot-wire chemical vapor deposition[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2012(18):5860-5866. |
| [9] | 黄海宾,沈鸿烈,唐正霞,吴天如,张磊.热丝CVD法在单晶硅衬底上低温外延生长Si和Ge薄膜的研究[J].人工晶体学报,2010(03):603-607. |
| [10] | 潘园园,沈鸿烈,张磊,吴天如,江丰.灯丝温度对热丝CVD法制备p型氢化纳米晶硅薄膜微结构与光电性能的影响[J].人工晶体学报,2012(02):284-289. |
| [11] | 张松青,张丽伟,赵新蕖,卢景霄.脉冲退火法制备多晶硅薄膜的研究[J].人工晶体学报,2008(02):285-288. |
| [12] | Zhengxia Tang;Honglie Shen;Haibin Huang;Linfeng Lu;Yugang Yin;Hong Cai;Jiancang Shen .Preparation of high quality polycrystalline silicon thin films by aluminum-induced crystallization[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2009(19):5611-5615. |
| [13] | 唐正霞,沈鸿烈,解尧,鲁林峰,江枫,沈剑沧.100μm大晶粒多晶硅薄膜的铝诱导法制备[J].功能材料,2010(03):453-456. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%