采用CoCrPtNb四元合金作磁记录介质,并使用多层膜结构C/(CoCrPt)100-xNbx/CrTi/C/Glass Substrate制备硬盘磁记录介质.实验结果表明:此种薄膜记录介质,即使在室温下溅射,也可得到高达240kA/m的矫顽力;此类薄膜在550℃高温下,经过30min退火后,其矫顽力有较大幅度提高,并在Nb含量为2.4%(原子分数)时达到极大值360kA/m此时剩磁比S=0.90,矫顽力矩形比S*=0.92,从而制成了适于高密度或超高密度磁记录使用的薄膜介质.并详细分析了在室温条件下溅射,此种介质矫顽力与Nb含量变化的关系;并对退火后介质矫顽力与Nb含量变化的关系也进行了讨论.
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