利用电子枪蒸镀Al_2O_3,同时辅以Ar 离子轰击的离子束辅助沉积方法(IBAD)制备Al_2O_3薄膜,并与单纯电子枪蒸镀方法(PVD)制备的薄膜进行了结构和表面形貌的比较。IBAD 法可以得到结构均匀致密的γ-Al_2O_3晶态薄膜,而PVD 方法仅能得到非晶态疏松的结构。分析结果表明,薄膜沉积过程中,提高离子轰击能量和增加基片加热温度在一定程度上具有相同的效果。
Alumina films were prepared by electron beam evaperation from α-Al_2O_3 with10 keV or 20 keV argon ion bombardment.The temperature of substrates was maintained atroom temperature(RT)or 300℃.The structure and topography were investigated by XRD,XPS,TEM and
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| [11] | 陈志,金懋昌.薄膜科学与技术,1990 |
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