铁电钛酸锶钡薄膜的最新研究进展

无机材料学报, 2003, 18(5): 989-997.

铁电钛酸锶钡薄膜的最新研究进展

朱小红 , 朱建国 , 郑东宁 , 李林

2. 2. 中国科学院物理研究所超导国家重点实验室, 北京 100080

1.1. College of Materials Science and Engineering

Sichuan University

Chengdu 610064

China

2. 2. National Laboratory for Superconductivity

Institute of Physics

Chinese Academy of Sciences

China

关键词：铁电/介电薄膜 , barium strontium titanate （BST-x） , microwave devices , dynamic random access device

Novellest Research on Ferroelectric Ba_xSr_1-xTiO₃ Thin Films

ZHU Xiao-Hong , ZHU Jian-Guo , ZHENG Dong-Ming , LI Lin

Keywords： ferroelectric/dielectric thin film , 钛酸锶钡 , 微波器件 , 动态随机存储器

铁电钛酸锶钡(Ba_xSr_1-xTiO₃)是一种拥有十分优越铁电/介电性能的材料,在可调谐微波器件及动态存储器件方面具有很好的应用前景.本文概括介绍了Ba_xSr_1-xTiO₃薄膜的研究意义、基本结构、制备方法、各种性能特征及其表征方法与应用展望;并对当前Ba_xSr_1-xTiO₃薄膜研究中的几个重要前沿问题进行了详细讨论.

Ferroelectric (Ba,Sr)TiO₃ thin films have excellent ferroelectric/dielectric properties, and promising
application prospect in tunable microwave devices and dynamic random access devices. In this article, their research backgrounds, basic
structures, preparation methods, various characterizations of thin film properties, and applications are summarized. Furthermore, the several
important problems of the current researches of (Ba,Sr)TiO₃ thin films are also discussed in great detail based on the acquired research
results.

参考文献

[1]

Boikov Y A, Claeson T. J. Appl. Phys., 1997, 81 (7): 3232--3236.
[2] Dalberth M J, Stauber R E, Price J C, et al. Appl. Phys. Lett., 1998, 72 (4): 507--509.
[3] Jia Q X, Findikoglu A T, Reagor D, et al. Appl. Phys. Lett., 1998, 73 (7): 897--899.
[4] Horikawa Tsuyoshi, Mikami Noboru, Makita Tetsuro, et al. Jpn. J. Appl. Phys., Part 1, 1993, 32: 4126--4130.
[5] Kingon Angus I, Maria Jon-Paul, Streiffer S K. NATURE, 2000, 406: 1032--1038.
[6] Park Soon Oh, Hwang Cheol Seong, et al. Jpn. J. Appl. Phys., Part 1, 1996, 35: 1548--1552.
[7] Yoon S G, Lee J C, Safari A. Integrated Ferroelectrics, 1995, 7 (1-4): 329---339.
[8] Chen C L, Shen J, Miranda F A, et al. Appl. Phys. Lett., 2001, 78 (5): 652--654.
[9] Lippmaa M, Nakagawa N, Ohashi S, et al. Appl. Phys. Lett., 1999, 74 (23): 3543--3545.
[10] Xi X X, Li H C, Geerk J, et al. Physica C, 1988, 153: 794--798.
[11] Gao Y, Tran T, Alluri P. Appl. Phys. Lett., 1999, 75 (3): 415--417.
[12] Gao Y, He S, Alluri P, et al. J. Appl. phys., 2000, 87 (1): 124--132.
[13] Cheng Jian-Gong, Tang Jun, Meng Xiang-Jian, et al. J. Am. Ceram. Soc., 2001, 84 (7): 1421--1424.
[14] Chen C L, Feng H H, Zhang Z, et al. Appl. Phys. Lett., 1999, 75 (3): 412--414.
[15] Cole M W, Hubbard C, Ngo E, et al. J. Appl. Phys., 2002, 92 (1): 475--483.
[16] Jeon Young-Ah, Choi Eun-Suck, Seo Tae-Suck, et al. Appl. Phys. Lett., 2001, 79 (7): 1012--1014.
[17] Carlson C M, Rivkin T V, Parilla P A, et al. Appl. Phys. Lett., 2000, 76 (14): 1920--1922.
[18] Baumert B A, Chang L H, Matsuda A T, et al. J. Appl. Phys., 1997, 82 (5): 2558--2566.
[19] Kuroiwa T, Tsunemine Y, Horikawa T, et al. Jpn. J. Appl. Phys., Part 1, 1994, 33: 5187--5191.
[20] Park J H, Kim B K, Park J G, et al. Ferroeletrics, 1999, 230 (1-4): 453--458.
[21] Dietz G W, Schumacher M, Waser R, et al. J. Appl. Phys., 1997, 82 (5): 2359--2364.
[22] Chang W, Horwitz J S, Carter A C, et al. Appl. Phys. Lett., 1999, 74 (7): 1033--1035.
[23] Kim Boum-Seock, Oh Se-Hoon, Son Seung-Young, et al. J. Appl. Phys., 2000, 87 (9): 4425--4429.
[24] Sinnamon L J, Bowman R M, Gregg J M. Appl. Phys. Lett., 2001, 78 (12): 1724--1726.
[25] McNeal Mark P, Jang Sei-Joo, Newnham Robert E. J. Appl. Phys., 1998, 83 (6): 3288--3297.
[26] Sirenko A A, Akimov I A, Fox J R, et al. Phys. Rev. Lett., 1999, 82 (22): 4500--4503.
[27] Amanuma K, Mori T, Hase T, et al. Jpn. J. Appl. Phys., Part 1, 1993, 32: 4150--4153.
[28] Lee Byoung Taek, Hwang Cheol Seong. Appl. Phys. Lett., 2000, 77 (1): 124--126.
[29] Vendik O G, Zubko S P, Ter-Martirosayn L T. Appl. Phys. Lett., 1998, 73 (1): 37--39.
[30] Hwang C S, Lee B T, Kang C S, et al. J. Appl. Phys., 1999, 85 (1): 287--295.
[31] Hieda K, Eguchi K, Fukushima N, et al. Proceedings of International Electron Devices Meeting (IEEE, New York, 1998). 807.
[32] Hwang Cheol Seong. J. Appl. Phys., 2002, 92 (1): 432--437.
[33] Joshi P C, Ramanathan S, Desu S B, et al. Integrated Ferroelectrics, 1998, 19: 141--148.
[34] YOON Ki Hyun, LEE Jae Chan, PARK Jihoon, et al. Jpn. J. Appl. Phys., Part 1, 2001, 40: 5497--5500.
[35] JEON Young-Ah, SEO Tae-Suck, YOON Soon-Gil. Jpn. J. Appl. Phys., Part 1, 2001, 40 (11): 6496--6500.
[36] Jia Q X, Park B H, Gibbons B J, et al. Appl. Phys. Lett., 2002, 81 (1): 114--116.
[37] Streiffer S K, Basceri C, Parker C B, et al. J. Appl. Phys., 1999, 86 (8): 4565--4575.
[38] Ban Z G, Alpay S P. J. Appl. Phys., 2002, 91 (11): 9288--9296.
[39] Rivkin T V, Carlson C M, Parilla P A, et al. Integrated Ferroelectrics, 2000, 29: 215--223.

上一张下一张

计量

下载量()
访问量()

作者相关

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网