SiGe 1器件性能出色,在射频器件中的频率高达50GHz,已用于制造GSM、DCS、GPS中的LNA、PA、DACs和混频器等.为了满足将来产品更新换代和制造高尖端产品的需要,现在的一些公司(如Atmel Wireless andMicrocontrollers)已经发展了第二代Si/SiGe双极技术(SiGe2).这种高性能的新技术可使发射区的宽度降到0.5μm,输运频率fT和最大震荡频率fmax达到90GHz以上[1];5GHz和20GHz的最大稳定增益(MSG)分别为22dB和11dB.SiGe 2技术能制造出应用更加广泛的各种器件,而0.5μm CMOS技术还处于发展阶段.
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