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采用替位掺杂的方法,使用激光分子束外延技术,成功地制备出钛酸锶、钛酸钡、钛酸锶/钛酸钡、YBCO/钛酸锶和钛酸锶/锰酸镧等全氧化物p-n结.X射线衍射(XRD)、原子力显微镜(AFM)、高分辨透射电镜(HRTEM)等测量分析结果均表明,p-n结构的表面与界面均达到原子尺度的光滑,p-n结的I-V曲线显示了很好的整流特性.首次观测到全氧化物p-n结电流和电压的磁调制特性与正的巨磁电阻效应,在290 K和255 K条件下,外磁场变化5398A/m时,磁电阻的最大灵敏度分别达到85Ω/79.6 A·m-1和246Ω/79.6A·m-1;在一个多层p-n结构上,磁电阻的变化率△R/R0达到517%.

参考文献

[1] Kanai M;Kawai T;Kawai S .[J].Applied Physics Letters,1991,58:771.
[2] Koinuma H;Yoshimoto M .[J].Applied Surface Science,1994,75:308.
[3] Yang Guozhen;Lu Huibin;Chen Zhenghao.[J].Science in China (A),1998:260.
[4] Shimizu T;Gotoh N;Shinozaki N et al.[J].Applied Surface Science,1997,117-118:400.
[5] Suzuki S.;Suzuki H.;Kawaguchi K.;Takahashi K.;Yoshisato Y.;Yamamoto T. .FABRICATION AND CHARACTERIZATION OF BA1-XKXBIO3/NB-DOPED SRTIO3 ALL-OXIDE-TYPE SCHOTTKY JUNCTIONS[J].Journal of Applied Physics,1997(10):6830-6836.
[6] Shimizu T;Okushi H;Newns D M.[J].Journal of Applied Physics,1999:857244.
[7] Newns DM.;Tsuei CC.;Gupta A.;Scott BA.;Schrott A.;Misewich JA. .Mott transition field effect transistor[J].Applied physics letters,1998(6):780-782.
[8] Misewich J A;Schrott A G .[J].Applied Physics Letters,2000,76:3632.
[9] Mitra C et al.[J].Applied Physics Letters,2001,79:2408.
[10] Mitra C.;Kobernik G.;Dorr K.;Muller KH.;Schultz L.;Raychaudhuri P. Pinto R.;Wieser E. .Magnetotransport properties of a room temperature rectifying tunnel junction made of electron and hole doped manganites[J].Journal of Applied Physics,2002(10 Pt.2):7715-7717.
[11] Mitra C et al.[J].Physical Review Letters,2003,90:17202.
[12] O'Donnell J;Andrus A E;Oh S et al.[J].Applied Physics Letters,2000,76:1914.
[13] O'Donnell J;Andrus A E;Oh S et al.[J].Applied Physics Letters,2000,76:1914.
[14] Takahashi K S;Sawa A;Ishii Y et al.[J].Physical Review B,2003,67:094413.
[15] WatanabeY .[J].Physical Review B,1999,59:11257.
[16] Kudo A;Yanagi H;Ueda K et al.[J].Applied Physics Letters,1999,75:2851.
[17] Tanaka H;Zhang J;Kawai T.[J].Physical Review Letters,2002:88,027204.
[18] Lu H B;Dai S Y;Chen F.[J].Ferroelectricity,2002:271,125.
[19] LU Hui-bin,Dai Shou-Yu,CHEN Zheng-Hao,LIU Li-feng,GUO Hai-Zhong,XIANG Wen-Feng,FEI Yi-Yan,HE Meng,ZHOU Yue-Liang,YANG Guo-Zhen.Colossal Magnetoresistive p-n Junctions of Te-Doped LaMnO3/Nb-doped SrTiO3[J].中国物理快报(英文版),2003(01):137-140.
[20] Yang G Z;Lu H B;Chen F et al.[J].Journal of Crystal Growth,2001,227-228:929.
[21] Wang N;Lu H B;Chen W Z et al.[J].Applied Physics Letters,1999,75:3464.
[22] Lu H B;Wang N;Chen W Z et al.[J].Journal of Crystal Growth,2002,212:173.
[23] Zhao T.;Chen F.;Dai SY.;Yang GZ.;Chen ZH.;Lu HB. .Highly conductive Nb doped SrTiO3 epitaxial thin films grown by laser molecular beam epitaxy[J].Journal of Crystal Growth,2000(3/4):451-455.
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