用直流反应磁控溅射法制备了玻璃基TiO2薄膜.溅射过程中,Ar气的分压保持在0.85Pa不变,而O2 的分压在0.10Pa～0.65Pa之间变化;镀膜试样在400℃～550℃之间进行热处理.用扫描电镜(SEM)、透射电镜(TEM)和紫外-可见光谱仪研究了薄膜的表面形貌、薄膜沉积速率和光学带隙宽度.结果表明,随着氧气分压从0.10Pa增加到0.65Pa,薄膜沉积速率从4.4nm/min下降到2.2nm/min,光学带隙从3.67eV下降到3.59eV,薄膜表面呈现出均匀的纳米晶粒和纳米孔;550℃热处理有助于较致密薄膜形成纳米晶粒和纳米孔,并降低带隙宽度.
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