用光电流作用谱、光电流-电势图等光电化学方法研究了ITO/聚3-甲基噻吩(PMeT)膜电极和ITO/TiO2/PMET复合膜电极的光电转换性质.结果表明,PMET膜导带位置为-3.44eV,禁带宽度为1.93eV.修饰ITO/TiO2电极可使光电流发生明显的红移,从而提高了宽禁带半导体的光电转换效率.
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