采用直流磁控溅射法制备了SmCo/Cr,SmCo/CrTi和SmCo/CrTi/Cr系列薄膜.SmCo薄膜的XRD结果表明:在Cr底层中添加Ti,得到的CrTi,CrTi/Cr底层也是以(110)面择优取向的,但是和Cr底层相比,衍射峰的位置由44.39°偏移到44.19°.薄膜的磁学性能由振动样品磁强计(VSM)测定,分析VSM的测量结果可知,用CrTi和CrTi/Cr做底层,SmCo薄膜的矫顽力Hc、矩形比S、矫顽力矩形比S*的值都比Cr底层的大,并且磁反转体积V*的值比Cr底层的小.SmCo薄膜的δM(H)曲线说明,Cr做底层时,薄膜晶粒间的相互作用为极化作用,CrTi,CrTi/Cr做底层时,薄膜晶粒间的相互作用为交换耦合相互作用.
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