沉积位置对脉冲激光沉积纳米Si晶薄膜微观结构的影响

功能材料, 2009, 40(10): 1595-1597.

沉积位置对脉冲激光沉积纳米Si晶薄膜微观结构的影响

周阳 ^1, , 郑红芳 ^2, , 王英龙 ^3, , 刘保亭 ^4,

1.河北大学,物理科学与技术学院,河北,保定,071002

2.保定学院,河北,保定,071000

3.河北大学,物理科学与技术学院,河北,保定,071002

4.河北大学,物理科学与技术学院,河北,保定,071002

基金项目: 国家自然科学基金(10774036;60876055) 河北省应用基础研究计划重点基础研究项目(08965124D) 教育部资助项目(207013) 河北省自然科学基金(E2008000631;E2008000620)

关键词：脉冲激光烧蚀 , 纳米Si薄膜 , 晶粒尺寸 , 羽辉动力学

Influnence of deposition position on the microstructure of nanocrrystalline Si film fabricated by pulsed laser deposition

在4.0×10-4Pa的真空条件下,采用脉冲激光烧蚀技术在单晶Si衬底和石英衬底上制备了非晶纳米Si薄膜.在N2气氛下,经过900℃热退火得到纳米Si晶薄膜.采用表面台阶测试仪、扫描电子显微镜、拉曼光谱仪等检测手段对样品不同位置的微观结构进行了表征.测量结果表明制备的纳米Si晶薄膜厚度及其晶粒尺寸分布不均匀,随着测量点与样品沉积中心距离的增加,薄膜的厚度逐渐减小,纳米Si晶粒的尺寸逐渐增大.从脉冲激光烧蚀动力学的角度对实验结果进行了定性的分析.

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沉积位置对脉冲激光沉积纳米Si晶薄膜微观结构的影响

Influnence of deposition position on the microstructure of nanocrrystalline Si film fabricated by pulsed laser deposition

参考文献