用PVT法制备了6H-SiC.用光学显微镜观察了晶体生长面的原生形貌.讨论了6H-SiC中蜷线的形状及其形成机理.蜷线起源于螺旋位错,它们的形状则决定于这些位错的符号与相对位置.在(0001)Si面上,蜷线表现为圆形螺旋,而在(0001)C面上则表现为六角形螺旋.通常情况下,蜷线的极点没有任何包裹物.然而在某些情况下,蜷线的极点会出现包裹物,如夹杂、微管、孔洞或者负晶等.当(0001)Si面作为生长面时,6H-SiC单晶的生长机制符合螺旋位错模型(BCF理论模型).
参考文献
[1] | Menzies A W C;Sloat C A .[J].Nature,1929,123:384. |
[2] | Burton W K et al.[J].Philosophical Transactions of the Royal Society of London Series,1951,A243:299. |
[3] | Sugiyama N.;Okumura K.;Tani T.;Kamiya N.;Okamoto A. .Step structures and dislocations of SiC single crystals grown by modified Lely method[J].Journal of Crystal Growth,1998(1/2):84-91. |
[4] | Wang Shizhong et al.[J].Materials Science and Engineering B,2001,83:8. |
[5] | Noboru Ohtani et al.[J].Surface Science,1998,398:L303. |
[6] | Heuell P.;Bullemer B.;Kulakov MA. .STEPPED MORPHOLOGY ON 4H AND 15R SILICON CARBIDE - MODELLING BY A RANDOM WALK[J].Surface Science: A Journal Devoted to the Physics and Chemistry of Interfaces,1995(2):965-970. |
[7] | Sato M et al.[J].Physical Review B,1995,51:11172. |
[8] | Friedel J.Dislocations[M].Oxford,New York:Pergamon Press,1964:195. |
[9] | Bischoff JL.;Kubler L.;Dentel D. .6H-SiC{0001} X-ray photoelectron diffraction characterization used for polarity determination[J].Surface Science: A Journal Devoted to the Physics and Chemistry of Interfaces,1998(3):392-402. |
[10] | Frank F C.[A].,1949:48. |
[11] | Mullin J W.Crystallization[M].London:Butterworths,1972:154. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%