欢迎登录材料期刊网

材料期刊网

高级检索

使用自行研制的椭球谐振腔式MPCVD装置,以H2-CH4为气源,在输入功率为9 kW,沉积压力为1.7 ×104 Pa和不同的气体流量条件下制备了金刚石膜.利用扫描电镜、激光拉曼谱对金刚石膜的表面和断口形貌、金刚石膜的品质等进行了表征.实验结果表明,利用椭球谐振腔式MPCVD装置能够在较高的功率下进行大面积金刚石膜的沉积;在高功率条件下,较高质量的金刚石膜的沉积速率可以达到4 ~5 μm·h-1的水平,而气体的流量则会显著影响金刚石膜的品质及其沉积速率.

参考文献

[1] 吕反修,唐伟忠,李成明,陈广超,佟玉梅.大面积光学级金刚石自支撑膜研究进展[J].红外技术,2003(04):1-7.
[2] Takeshi Tachibana;Yutaka Ando;Akihiko Watanabe .Diamond films grown by a 60-kW microwave plasma chemical vapor deposition system[J].Diamond and Related Materials,2001(9-10):1569-1572.
[3] Yutaka Ando;Yoshihiro Yokota;Takeshi Tachibana;Akihiko Watanabe;Yoshiki Nishibayashi;Koji Kobashi;Takashi Hirao;Kenjiro Oura .Large area deposition of <100>-textured diamond films by a 60-kW microwave plasma CVD reactor[J].Diamond and Related Materials,2002(3-6):596-600.
[4] K.W. Hemawan;T.A. Grotjohn;D.K. Reinhard .Improved microwave plasma cavity reactor for diamond synthesis at high-pressure and high power density[J].Diamond and Related Materials,2010(12):1446-1452.
[5] 王凤英,唐伟忠,姜春生,于盛旺.椭球形微波等离子体金刚石膜沉积装置与金刚石膜的制备[J].金属热处理,2009(09):20-24.
[6] WANG Feng-ying,郭会斌,TANG Wei-zhong,吕反修.圆柱形和椭球形谐振腔式MPCVD装置中微波等离子体分布特征的数值模拟与比较[J].人工晶体学报,2008(04):895-900,907.
[7] Ralchenko V. .Quality of diamond wafers grown by microwave plasma CVD: effects of gas flow rate[J].Diamond and Related Materials,1999(2 Mar):189-193.
[8] Nistor S V;Stefan M;Ralchenko V et al.Nitrogen and Hydrogen in Thick Diamond Films Grown by Microwave Plasma Enhanced Chemical Vapor Deposition at Variable H Flow Rates[J].Journal of Applied Physics,2000,87:8741.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%