ISOTROPIC TEXTURING OF POLYCRYSTALLINE SILICON WAFERS

金属学报(英文版), 2005, 18(3): 269-274.

^1, , ^2, , ^3,

1.Guangzhou Institute of Energy Conversion, The Chinese Academy of Sciences, Guangzhou 510640, China

2.Guangzhou Institute of Energy Conversion, The Chinese Academy of Sciences, Guangzhou 510640, China;The School of Physics and Engineering, Zhongshan University, Guangzhou 510275, China

3.College of Mechanical Engineering, South China University of Technology, Guangzhou 510640, China

基金项目: 国家自然科学基金(50376067) 国家高技术研究发展计划(863计划)(2001AA 513060)

ISOTROPIC TEXTURING OF POLYCRYSTALLINE SILICON WAFERS

Keywords： texturing

An isotropic etching technique of texturing silicon solar cells has been applied to polycrystalline silicon wafers with different acid concentrations. Optimal etching conditions have been determined by etching rate calculation, scanning electron microscope (SEM) image and reflectance measurement. The surface morphology of the textured wafers varies in accordance with the different etchant concentration which in turn leads to the dissimilarity of etching speed. Textured polycrystalline silicon wafer surfaces display randomly located etched pits which can reduce the surface reflection and enhance the light absorption. The special relationship between reflectivity and etching rate was studied. Reflectance measurements show that isotropic texturing is one of the suitable techniques for texturing polycrystalline silicon wafers and benefits solar cells performances.

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ISOTROPIC TEXTURING OF POLYCRYSTALLINE SILICON WAFERS

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