通过工艺参数的优化,采用直流反应溅射工艺成功地制备了具有良好的电化学循环稳定性的多晶氧化钨薄膜.Raman散射光谱研究表明:随着锂离子和电子的共同注入,多晶薄膜中的W6+逐渐被还原为W5+.红外反射测试表明:电子注入薄膜后,成为自由载流子,使得氧化钨薄膜表现出一定的金属特性,具有一定的红外反射调制能力.采用该工艺制备的WO3/ITO/Glass结构的发射率可在0.261~0.589的范围内可逆调节.
Polycrystalline tungsten oxide films with good electrochemical stability were prepared by dc reactive sputtering methods. The Raman spectra of the films show that W6+ is reduced to W5+ with Li+ and electrons co-intercalation. Intercalated electrons entere extended states of crystalline tungsten oxide and cause infrared reflectance. The emissivity of WO3/ITO/Glass can be reversible modulated between 0.261-0.589.
参考文献
[1] | Svensson J S E M, Granqivist C G. Thin Solid Films, 1985, 126: 31--38. [2] Jeffrey S Hale, Michael DeVries, Brad Dworak, et al. Thin Solid Films, 1998, 313--314: 205--209. [3] Jeffrey S Hale, John A Woolam. Thin Solid Films, 1999, 339: 174--180. [4] Chris Trimble, Michael DeVries, Jeffery S Hale, et al. Thin Solid Films, 1999, 355--356: 26--34. [5] 王其和, 黄庆兵. 南京大学学报(自然科学), 1997, 33 (4): 518--526. [6] Granqvist G G. Handbook of Inorganic Electochromic Materials, Elsevier, New York, 1995. 181--187. [7] Schirmer O, Writtwer V, Baur G, et al. J. Electrochem. Soc., 1977, 124 (5): 749--753. [8] Goldner R B, Mendelsohn D H, Alexandere J, et al. Appl. Phys. Lett., 1983, 43 (12): 1093--1095. [9] Arntz F O, Goldner R B, Morel B, et al. J. Appl. Phys., 1990, 67 (6): 3177--3179. [10] Tompsett G A, Sammes N M, Zhang Y, et al. Solid State Ionics, 1998, 113-115: 631--638. [11] Shigesato Y, Murayama A, Kamimori T, et al. Applied Surface Science, 1998, 33/34: 804--811. [12] Falaras P A, Hugot-Le Goff, Joiret S. SPIE, 1990, Vol.IS4, 447--470. [13] Lee Se-Hee, Cheong Hyeonsik M, Tracy C Edwin, et al. Electrochimica Acta, 1999, 44: 3111--3115. [14] Lee Se-Hee, Cheong Hyeonsik M, Liu Ping, et al. Electrochimica Acta, 2001, 46: 1995--1999. [15] Lee Se-Hee, Cheong Hyeonsik M, Park Nam-Gyu, et al. Solid States Ionics, 2001, 140: 135--139. |
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