AlGaN/GaN High Electron Mobility Transistors for High-Power and Low-Noise Applications

稀土学报(英文版), 2004, 22(z3): 279-281.

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1.SVT Associates, 7620 Executive Drive, Eden Prairie MN 55344, USA;Superior Vacuum Science & Technology Shenyang Ltd., Shenyang 110179, China

2.SVT Associates, 7620 Executive Drive, Eden Prairie MN 55344, USA

3.SVT Associates, 7620 Executive Drive, Eden Prairie MN 55344, USA

4.SVT Associates, 7620 Executive Drive, Eden Prairie MN 55344, USA;Superior Vacuum Science & Technology Shenyang Ltd., Shenyang 110179, China

AlGaN/GaN High Electron Mobility Transistors for High-Power and Low-Noise Applications

Keywords： HEMT

The paper different aspects of MBE growth of nitride-based high electron mobility transistor (HEMT) and dilute-nitride, AlGaAsN-based, heterostructures were discussed. New growth and monitoring techniques developed at SVT were described and recent device results were presented.

参考文献

[1]	Kuliev A;Kumar V;Schwindt R et al.[J].Solid-State Electronics,2003,47:117.
[2]	Bobel F G;Moller H;Wowchak Boebel A et al.[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,1994,12(02):1207.
[3]	Held R;Crawford D E;Johnston A M .[J].Journal of Electronic Materials,1997,26(03):272.
[4]	Hickman R;Van Hove J M;Chow P P et al.[J].Solid-State Electronics,1998,42:12.

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AlGaN/GaN High Electron Mobility Transistors for High-Power and Low-Noise Applications

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