随着无线通讯技术的快速发展,高性能金属-绝缘体-金属(MIM)电容器已引起人们的极大关注,成为下一代射频集成电路的必然选择.本文从MIM电容的技术背景、制备方法、绝缘介质的设计以及电极材料几个方面,对MIM电容器件的研究进展进行了较全面的综述,可望为开发下一代射频集成电路用高性能MIM电容提供技术指导.
参考文献
[1] | Ding SJ;Huang YJ;Li YB;Zhang DW;Zhu C;Li MF .Metal-insulator-metal capacitors using atomic-layer-deposited Al2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communications[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,2006(6):2518-2522. |
[2] | HUANG Yu-Jian,HUANG Yue,DING Shi-Jin,ZHANG Wei,LIU Ran.Electrical Characterization of Metal-Insulator-Metal Capacitors with Atomic-Layer-Deposited HfO2 Dielectrics for Radio Frequency Integrated Circuit Application[J].中国物理快报(英文版),2007(10):2942-2944. |
[3] | Ding Shi-Jin,Huang Yu-Jian,Huang Yue,Pan Shao-Hui,Zhang Wei,Wang Li-Kang.High density Al2O3/TaN-based metal-insulator metal capacitors in application to radio frequency integrated circuits[J].中国物理(英文版),2007(09):2803-2808. |
[4] | Ulrike Diebold .The surface science of titanium dioxide[J].Surface Science Reports,2003(5/6):53-229. |
[5] | S. A. Campbell;H.-S. Kim;D. C. Gilmer;B. He;T. Ma;W. L. Gladfelter .Titanium dioxide (TiO_2)-based gate insulators[J].IBM journal of research and development,1999(3):383-392. |
[6] | G. D. Wilk;R. M. Wallace;J. M. Anthony .High-κ gate dielectrics: Current status and materials properties considerations[J].Journal of Applied Physics,2001(10):5243-5275. |
[7] | Atomic layer deposition of high capacitance density Ta_2O_5-ZrO_2 based dielectrics for metal-insulator-metal structures[J].Microelectronic engineering,2010(2):144. |
[8] | S.W. Smith;K.G. McAuliffe;J.F. Conley Jr. .Atomic layer deposited high-k nanolaminate capacitors[J].Solid-State Electronics,2010(10):1076-1082. |
[9] | C. Jorel;C. Vallee;P. Gonon;E. Gourvest;C. Dubarry;E. Defay .High performance metal-insulator-metal capacitor using a SrTiO_(3)/ZrO_(2) bilayer[J].Applied Physics Letters,2009(25):253502-1--253502-3-0. |
[10] | Cheng, CH;Hsu, HH;Chen, WB;Chin, A;Yeh, FS .Characteristics of Cerium Oxide for Metal-Insulator-Metal Capacitors[J].Electrochemical and solid-state letters,2010(1):II16-II19. |
[11] | F. El Kamel;P. Gonon;C. Vallee .Experimental evidence for the role of electrodes and oxygen vacancies in voltage nonlinearities observed in high-k metal-insulator-metal capacitors[J].Applied physics letters,2007(17):172909-1-172909-3-0. |
[12] | Ch. Wenger;M. Lukosius;H.-J. Muessig;G. Ruhl;S. Pasko;Ch. Lone .Influence Of The Electrode Material On Hfo_2 Metal-insulator-metal Capacitors[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,2009(1):286-289. |
[13] | C. Vallee;P. Gonon;C. Jorel;F. El Kamel .Electrode oxygen-affinity influence on voltage nonlinearities in high-k metal-insulator-metal capacitors[J].Applied physics letters,2010(23):233504-1-233504-3. |
[14] | 许军,黄宇健,丁士进,张卫.Ta和TaN底电极对原子层淀积HfO2介质MIM电性能的影响[J].物理学报,2009(05):3433-3436. |
[15] | John Robertson .Band offsets of wide-band-gap oxides and implications for future electronic devices[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,2000(3):1785-1791. |
[16] | K. C. Chiang;C. H. Cheng;H. C. Pan;C. N. Hsiao;C. P. Chou;Albert Chin;H. L. Hwang .High-Temperature Leakage Improvement in Metal-Insulator-Metal Capacitors by Work-Function Tuning[J].IEEE Electron Device Letters,2007(3):235-237. |
[17] | C. H. Cheng;H. C. Pan;H. J. Yang;C. N. Hsiao;C. P. Chou;S. P. McAlister;Albert Chin .Improved High-Temperature Leakage in High-Density MIM Capacitors by Using a TiLaO Dielectric and an Ir Electrode[J].IEEE Electron Device Letters,2007(12):1095-1097. |
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