研究了Sb替代部分In对铁磁性形状记忆合金材料Mn50Ni40In10相变和磁性的影响.研究表明,在掺杂后形成的Mn50Ni40In10-xSbx系列合金中,随着Sb含量的增加,马氏体的逆相变温度逐渐升高,居里温度逐渐降低.其相变温度的升高主要归结于电子浓度和晶格体积的变化以及电子轨道的杂化作用.Sb掺杂会导致样品马氏体相和奥氏体相之间的饱和磁化强度差△M的变化,x＜0.6的微量掺杂会使△M增大,x＞0.6时,△M随着掺杂量的增加而逐渐降低甚至减为零.x=0.6的样品(Mn50Ni40In9.4Sb0.6)在20 kOe的外场作用下△M达到74 emu/g,同时在该材料中观察到了磁场驱动的马氏体到奥氏体的转变,显示出该材料作为磁驱动形状记忆材料的潜在应用前景.
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