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Mn(3+x) Ga(1-x) N compounds with x = 0.0 and 0.1 were prepared by re-sintering Mn(2)N(0.86), Ga bulk and Mn powders. These compounds are deduced to be the N-deficiency ones. In Mn(3)GaN, a step-like magnetic transition, from frustrated antiferromagnetism to paramagnetism with increasing temperature, occurs at 370 K, while the same magnetic transition of Mn(3.1)Ga(0.9)N is far above 380 K. The enhanced magnetization of Mn(3)GaN at low temperatures is ascribed to the fast lowering of antiferromagnetism. The electrical resistivity of Mn(3)GaN exhibits a typically metallic conducting behavior with a positive magnetoresistance of 4-7%.