研究了硅通孔(TSV)镀铜用甲基磺酸铜高速镀液(由Cu(CH3SO3)2 40 g/L、甲基磺酸60 g/L及Cl- 50 mg/L组成)中氯离子的作用机理.采用旋转圆盘电极研究了不同扩散条件下Cl-的作用效果,并采用电化学阻抗谱(EIS)和电子顺磁共振(EPR)探讨了Cl-在铜电化学沉积中的影响机制和对Cu+配位场的影响.结果表明:在深孔内扩散控制条件下,Cl-对铜沉积有明显的加速作用；在表面非扩散控制区域,尤其是高电流密度区,Cl-具有一定的抑制效果.因此,Cl-的存在有利于改善TSV深孔镀铜填充效果,提高填充速率.
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