利用负偏压增强热丝化学气相沉积系统在沉积有过渡层Ta和催化剂层NiFe的Si衬底上制备出准直碳纳米管,并用扫描电子显微镜研究了它们的生长和结构,结果表明辉光放电和压强对其生长和结构有极大的影响.若无辉光放电产生,碳纳米管是弯曲的,有辉光放电时,碳纳米管是准直的.当压强较大时,准直碳纳米管较容易生长,并且随着压强的减小,其平均直径减小和平均长度增大.但压强为5Pa时,准直碳纳米管却不能够生长.最后,分析和讨论了辉光放电和压强对准直碳纳米管生长和结构的影响.
参考文献
[1] | Groning O.;Emmenegger C.;Groning P.;Schlapbach L.;Kuttel OM. .Field emission properties of carbon nanotubes[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,2000(2):665-678. |
[2] | Popov V N;Van Doren V E .Elastic properties of single carbon nanotubes[J].Physical Review,B61:3078. |
[3] | Hamada N;Sawada S;Oshiyama A .New one-dimensional conductors: Graphite microtubules[J].Physical Review Letters,1992,68:1579. |
[4] | LI X S;Zhu H W;Ci L J .Hydrogen Uptake by Graphitized Multi-wall Carbon Nanotubes under Moderate Pressure and at Room Temperature[J].Carbon,2001,39:2077. |
[5] | MORIGUCHI K;Munetoh S;Abe M .Nano-tube-like surface in graphite particles and its formation mechanism: A role in anodes of Lithium-ion secondary batters[J].Journal of Applied Physics,2000,88:6369. |
[6] | Lei W.;Tong LS.;Yin HC.;Tu Y.;Zhu CC.;Wang BP. .Study of the emission performance of carbon nanotubes[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,2000(6):2704-2709. |
[7] | Obraztsov A N;Pavlosky I;Volkov A P .Aligned carbon nanotube films for cold cathode application[J].Journal of Vacuum Science and Technology,2000,B18:1059. |
[8] | Zhang W D;Thong J T L;Tjiu W C .Fabrication of vertically aligned carbon nanotubes patterns by chemical vapor deposition for field emitters[J].Diamond and Related Materials,2002,11:1638. |
[9] | Choi W B;Chu J U;Seok K S .Ultrahigh-density nanotransistors by using slectively grown vertical carbon nanotubes[J].Applied Physics Letters,2001,79:3696. |
[10] | WIND S J;Appenzeller J;Martel R .Vertical scanning of carbon nanotube field-effect transistors using top gate electrodes[J].Applied Physics Letters,2002,80:3817. |
[11] | Chhowalla M;Teo K B K;Ducati C .Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition[J].Journal of Applied Physics,2001,90:5308. |
[12] | Merkulov V I;Lowndes D H;Wei Y Y .Patterned growth of individual and multiple vertically aligned carbon nanofibers[J].Applied Physics Letters,2000,76:3555. |
[13] | 王必本;Seungho Choi;王万录.碳纳米管生长过程中某些问题的研究[A].重庆,2002:15. |
[14] | Wang B B;Wang W L;LIAO K J .Theoretical analysis of ion bombardment roles in bias enhanced nucleation process of CVD diamond[J].Diamond and Related Materials,2001,10:1622. |
[15] | Wang BB.;Liao KJ.;Xiao JL.;Wang WL. .Experimental and theoretical studies of diamond nucleation on silicon by biased hot filament chemical vapor deposition - art. no. 085412[J].Physical Review.B.Condensed Matter,2001(8):085412-1-085412-12. |
[16] | 余其铮.辐射换热基础[M].北京:高等教育出版社,1990:137. |
[17] | 张立德;牟季美.纳米材料和纳米结构[M].北京:科学出版社,2001:62. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%