将剂量为2×1016 cm-2的C+以60 keV的能量注入到SiO2薄膜中并进行了退火处理.从样品的室温光致发光(PL)光谱中观察到六个PL峰,其峰位分别处于2.601 eV、2.857 eV、3.085 eV、3.249 eV、3.513 eV和3.751 eV.其中3.249 eV处的PL峰与4H-SiC有关.而对于尚未见报道的3.751 eV处PL峰,进行了红外吸收和荧光激发(PLE)测试:在PLE谱4.429 eV处显示出一个对应于3.751 eV处的激发峰.在红外吸收谱上证实0.205 eV(1650cm-1)处的吸收峰与3.751 eV处发光峰的起源相关,从而推断在3.751 eV处的PL峰应起源于氧空位缺陷.
参考文献
| [1] | B. Garrido;M. Lopez;O. Gonzalez .Correlation between structural and optical properties of Si nanocrystals embedded in SiO_(2): The mechanism of visible light emission[J].Applied physics letters,2000(20):3143-3145. |
| [2] | Xu, W.-T.;Tu, H.-L.;Liu, D.-L.;Teng, R.;Xiao, Q.-H.;Chang, Q. .Visible photoluminescence of nanometer-sized SiGe/Si heterostructure fabricated by ion implantation[J].Journal of nanoparticle research: An interdisciplinary forum for nanoscale science and technology,2011(12):7095-7098. |
| [3] | Shen JK.;Yuan RK.;Tang N.;Zou JP.;Mei YF.;Tan C.;Bao XM. Siu GG.;Wu XL. .Enhanced ultraviolet photoluminescence from SiO2/Ge : SiO2/SiO2 sandwiched structure[J].Applied physics letters,2000(20):3134-3136. |
| [4] | Agnello S;Nuccio L .Thermal stability of gamma-irradiation-induced oxygen-deficient centers in silica[J].Physical review, B. Condensed matter and materials physics,2006(11):5203-1-5203-6-0. |
| [5] | Zhu M;Chen G;Chen P;TSING HUA UNIV INST MICROELECT BEIJING 100084 PEOPLES R CHINA. .Green/blue light emission and chemical feature of nanocrystalline silicon embedded in silicon-oxide thin film[J].Applied physics, A. Materials science & processing,1997(2):195-198. |
| [6] | Junwei Wei;Adrian Wirth;Michael C. Downer;Bernardo S. Mendoza .Second-harmonic and linear optical spectroscopic study of silicon nanocrystals embedded in SiO_2[J].Physical review, B. Condensed matter and materials physics,2011(16):165316:1-165316:15. |
| [7] | Bregolin, F.L.;Behar, M.;Sias, U.S. .Structural and optical properties of Ge nanocrystals obtained by hot ion implantation into SiO _2 and further ion irradiation[J].Journal of Luminescence: An Interdisciplinary Journal of Research on Excited State Processes in Condensed Matter,2012(6):1339-1344. |
| [8] | Rebohle L.;Grotzschel R.;Markwitz A.;Schmidt B. Tyschenko IE.;Skorupa W.;Frob H.;Leo K.;von Borany J. .Strong blue and violet photo- and electroluminescence from Ge- and Si-implanted silicon dioxide[J].Physica Status Solidi, A. Applied Research,1998(1):31-35. |
| [9] | Wang ZG.;Liu J.;Zhu ZY.;Jin YF.;Xie EQ.;Zhu TW.;Chen XX.;Sun YM. Hou MD. .Photoluminescence from C+-implanted SiO2 films after swift heavy ion irradiations[J].Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms,2002(0):396-400. |
| [10] | YANG Lin-lin,GUO Heng-qun,ZENG You-hua,WANG Qi-ming.360-nm Photoluminescence from Silicon Oxide Films Embedded with Silicon Nanocrystals[J].半导体光子学与技术（英文版）,2006(02):90-94. |
| [11] | 刘纯宝,王志光.C离子注入对SiO2薄膜光致发光特性的影响[J].功能材料,2012(05):579-581,586. |
| [12] | Zhuge LJ;Wu XM;Li Q;Wang WB;Xiang SL .Origin of violet photoluminescence in SiO2 films co-doped with silicon and carbon[J].Physica, E. Low-dimensional systems & nanostructures,2004(1/2):86-91. |
| [13] | Wang Chong,Yang Yu,Yang Rui-Dong,Li Liang,Xiong Fei,Bao Ji-Ming.Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure[J].中国物理B（英文版）,2011(02):395-401. |
| [14] | Yang Yu,Wang Chong,Yang Rui-Dong,Li Liang,Xiong Fei,Bao Ji-Ming.Photoluminescence evolution in self-ion-implanted and annealed silicon[J].中国物理B（英文版）,2009(11):4906-4911. |
| [15] | 李敏,盛毅.高斯拟合算法在光谱建模中的应用研究[J].光谱学与光谱分析,2008(10):2352-2355. |
| [16] | 李慧,卢卓宇,蒋昌忠,任峰,肖湘衡,蔡光旭.离子注入形成SiC纳米颗粒的发光性能研究[J].武汉理工大学学报,2007(z1):97-100. |
| [17] | 马峥,连洁,王青圃,马跃进,宋平,高尚,吴仕梁,王晓,徐现刚,李娟.退火对6H-SiC晶体的光学性质及光致发光的影响[J].红外与激光工程,2010(05):879-882. |
| [18] | Song HZ.;Li NS.;Wu XL.;Bao XM. .Strong ultraviolet photoluminescence from silicon oxide films prepared by magnetron sputtering[J].Applied physics letters,1998(3):356-358. |
| [19] | 程萍,张玉明,张义门.退火对非故意掺杂4H-SiC外延材料386nm和388nm发射峰的影响[J].物理学报,2011(01):539-542. |
| [20] | 苗瑞霞,张玉明,汤晓燕,张义门.4H-SiC中基面位错发光特性研究[J].物理学报,2011(03):745-748. |
| [21] | Nishio K.;Koga J.;Yamaguchi T.;Yonezawa F. .Theoretical study of light-emission properties of amorphous silicon quantum dots - art. no. 195304[J].Physical review, B. Condensed matter and materials physics,2003(19):5304-0. |
| [22] | Allan G;Delerue C;Lannoo M .Electronic structure of amorphous silicon nanoclusters[J].Physical review letters,1997(16):3161-3164. |
| [23] | 李玉国,王强,薛成山,李怀祥,石礼伟.注C+外延硅的光致发光特性[J].半导体学报,2003(12):1272-1275. |
| [24] | 佟嵩,刘湘娜,高婷,尹浩,陈逸君,鲍希茂.Si：H：O薄膜的室温强紫外光致发光[J].物理学报,1999(02):378-384. |
| [25] | 王国立,郭亨群.掺Al富Si/SiO2薄膜制备及紫外发光特性研究[J].半导体技术,2008(02):109-112. |
| [26] | 安霞,庄惠照,杨莺歌,李怀祥,薛成山.在Si（111）上磁控溅射碳化硅薄膜的H2退火效应[J].半导体学报,2002(06):593-598. |
| [27] | 陈长青,毛旭,周祯来,陈刚,刘焕林,杨宇.射频磁控溅射纳米SiC薄膜及其拉曼和红外分析[J].功能材料,2004(z1):1232-1235. |
| [28] | 石礼伟,李玉国,王强,薛成山,庄惠照.nc-SiC/SiO2镶嵌薄膜材料的制备、结构和发光特性[J].微纳电子技术,2004(07):23-26,30. |
| [29] | 于威,崔双魁,路万兵,王春生,傅广生.纳米6H-SiC薄膜的等离子体化学气相沉积及其紫外发光[J].半导体学报,2006(10):1767-1770. |
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