利用甲醇做氧源,采用金属有机物化学气相沉积(MOCVD)工艺在硅(111)衬底上生长了一系列的氧化锌薄膜,生长温度为400～600 ℃.薄膜的表面形貌及晶体质量分别利用场发射扫描电镜及X射线衍射仪进行了测量.研究表明:随着生长温度的降低,在X射线衍射图谱中氧化锌(101)峰取代了(002)峰成为了主峰.这可能是由于温度过低使得甲醇未完全分解,而甲醇分子抑制了氧化锌沿c轴极性过快的生长所致.室温光致发光光谱结果表明在较高生长温度下获得的样品具有良好的光学性质,发光强度随着温度的降低而降低.
参考文献
| [1] | 冯程程,周明,吴春霞,马伟伟,李刚,蔡兰.氧分压对化学气相沉积法合成ZnO纳米结构形貌的影响[J].人工晶体学报,2009(03):657-661. |
| [2] | Weisbuch C.;Houdre R.;Benisty H. .Overview of fundamentals and applications of electrons, excitons and photons in confined structures [Review][J].Journal of Luminescence: An Interdisciplinary Journal of Research on Excited State Processes in Condensed Matter,2000(4):271-293. |
| [3] | 吴莉莉,邹科,赵金博,石元昌,吴佑实.纳米ZnO的形态控制及其发光性能[J].人工晶体学报,2009(03):689-692,709. |
| [4] | Haase M A;Qiu J;De Puydt J M et al.Blue-green Laser Diodes[J].Applied Physics Letters,1991,59:1272. |
| [5] | Jain S C;Willander M;Narayan J et al.III-nitrides:Growth,Characterization,and Properties[J].Journal of Applied Physics,2000,87:965. |
| [6] | Kazuhiro Miyamoto;Michihiro Sano;Hiroyuki Kato;Takafumi Yao .High-electron-mobility ZnO epilayers grown by plasma-assisted molecular beam epitaxy[J].Journal of Crystal Growth,2004(1/2):34-40. |
| [7] | Ye J D;Gu S L;Liu W et al.Competitive Adsorption and Two-site Occupation Effects in Metal-organic Chemical Vapor Deposition of ZnO[J].Applied Physics Letters,90(17):174107-174109. |
| [8] | Sang-Hun Jeong;Il-Soo Kim;Sang-Sub Kim;Jae-Keun Kim;Byung-Teak Lee .Homo-buffer layer effects and single crystalline ZnO hetero-epitaxy on c-plane sapphire by a conventional RF magnetron sputtering[J].Journal of Crystal Growth,2004(1/3):110-115. |
| [9] | Jae Hyoung Choi;Hitoshi Tabata;Tomoji Kawai .Initial preferred growth in zinc oxide thin films on Si and amorphous substrates by a pulsed laser deposition[J].Journal of Crystal Growth,2001(4):493-500. |
| [10] | B.P. Zhang;K. Wakatsuki;N.T. Binh;N. Usami;Y. Segawa .Effects of growth temperature on the characteristics of ZnO epitaxial films deposited by metalorganic chemical vapor deposition[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2004(1/2):12-19. |
| [11] | Srupanidihi S B;Sayer M .Position and Pressure Effects in Rf Magnetron Reactive Sputter Deposition of Piezoelectric Zinc Oxide[J].Journal of Applied Physics,1984,56(11):3308-3318. |
| [12] | Liu YX.;Liu YC.;Shen DZ.;Zhong GZ.;Fan XW.;Kong XG.;Mu R.;Henderson DO. .The structure and photoluminescence of ZnO films prepared by post-thermal annealing zinc-implanted silica[J].Journal of Crystal Growth,2002(1/2):152-156. |
| [13] | Fons P.;Niki S.;Yamada A.;Matsubara K.;Watanabe M.;Iwata K. .Uniaxial locked growth of high-quality epitaxial ZnO films on (11(2)over-bar-0)alpha-Al2O3[J].Journal of Crystal Growth,2000(2/3):532-536. |
| [14] | Oda S;Tokunaga H;Kitajima N et al.Highly Oriented ZnO Films Prepared by MOCVD from Diethylzinc and Alcohols[J].Japanese Journal of Applied Physics,1985,24(12):1607. |
| [15] | Hahn B.;Pschorr-Schoberer E.;Gebhardt W.;Heindel G. .MOCVD layer growth of ZnO using DMZn and tertiary butanol[J].Semiconductor Science and Technology,1998(7):788-791. |
| [16] | Liu CY;Zhang BP;Binh NT;Wakatsuki K;Segawa Y .Temperature dependence of structural and optical properties of ZnO films grown on Si substrates by MOCVD[J].Journal of Crystal Growth,2006(2):314-318. |
| [17] | Wang JZ;Peres M;Soares J;Gorochov O;Barradas NP;Alves E;Lewis JE;Fortunato E;Neves A;Monteiro T .Annealing properties of ZnO films grown using diethyl zinc and tertiary butanol[J].Journal of Physics. Condensed Matter,2005(10):1719-1724. |
| [18] | Fujimura N;Nishihara T;Goto S et al.Control of Preferred Orientation for ZnO_x Films:Control of Self-texture[J].Journal of Crystal Growth,1993,130(1-2):269-279. |
| [19] | Zhang PF;Liu XL;Wei HY;Fan HB;Liang ZM;Jin P;Yang SY;Jiao CM;Zhu QS;Wang ZG .Rapid thermal annealing properties of ZnO films grown using methanol as oxidant[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2007(19):6010-6013. |
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