钛酸钡系PTCR半导体陶瓷烧结过程的计算机模拟 Ⅱ.烧结中后期及奥氏熟化过程中的晶粒生长

功能材料, 2001, 32(6): 638-642.

钛酸钡系PTCR半导体陶瓷烧结过程的计算机模拟 Ⅱ.烧结中后期及奥氏熟化过程中的晶粒生长

张道礼 ^1, , 翁广安 ^2, , 龚树萍 ^3, , 周东祥 ^4,

1.华中科技大学电子科学与技术系,

2.计算机科学与技术学院,

3.华中科技大学电子科学与技术系,

4.华中科技大学电子科学与技术系,

基金项目: 国家高技术研究发展计划(863计划)(715-006-0070)

关键词：钛酸钡系PTCR陶瓷 , 计算机模拟 , 烧结中后期 , 奥氏熟化 , 晶粒生长

Computer simulation of sintering process of BaTiO3-based PTCR ceramics Ⅱ. Grain growth of intermediate and final stages of sintering and ostwald ripening process

对Monte-Carlo计算机模拟法的Q-States Potts模型进行了修正,用于模拟BaTiO3系PTCR半导体陶瓷烧结中后期的晶粒生长和奥氏熟化过程以及液相性质对晶粒生长的影响.模拟结果表明:在含有液相的二相系统,钛酸钡半导瓷样品在1240℃附近体积收缩率基本上达到了最大值,以后的保温阶段是在液相控制下的晶粒生长和致密化过程,这和大多数实验结果是一致的.

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钛酸钡系PTCR半导体陶瓷烧结过程的计算机模拟 Ⅱ.烧结中后期及奥氏熟化过程中的晶粒生长

Computer simulation of sintering process of BaTiO3-based PTCR ceramics Ⅱ. Grain growth of intermediate and final stages of sintering and ostwald ripening process

参考文献