在950℃的氮化温度下,通过单氢氧化镓(GaO2H)粉末与流动的NH3反应35 min制备出粒状GaN微晶.通过X射线衍射(XRD)和扫描电镜(SEM)研究发现,GaN粉末是六角纤锌矿结构的粒状微晶,其晶格常数a和c分别为0.3191 nm和0.5192 nm.X射线光电子能谱(XPS)揭示试样中有Ga-N键形成,Ga与N两元素比为1∶1.
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