用RF磁控溅射的方法在最佳沉积条件下在Si(100)基底上沉积了纳米氮化硼薄膜,然后对薄膜在真空度低于5×10-4Pa、温度分别为800℃和1000℃条件下进行了表面热处理,分别用红外光谱、原子力显微镜以及不同退火温度的场发射试验对薄膜进行了研究,结果表明表面热处理对BN薄膜的表面形貌没有明显影响,样品场发射特性的变化可能与表面负电子亲和势有关,未进行热处理的样品阈值电场较低,可能归因于表面负电子亲和势效应,阈值电场为8V/μm,发射电流为80μA,热处理温度为800℃时,负电子亲和势仍然存在,直到热处理温度达到1000℃时,表面负电子亲和势才消失.
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