采用红外热成像设备检测三维针刺密度梯度纤维预制体化学气相渗透法(CVI)沉积碳化硅(SiC)前后内部的密度变化,追踪材料内部缺陷的遗传性,并用X射线和工业电子计算机X射线断层扫描技术(CT)验证上述实验的可靠性.结果表明:原预制体内部的孔洞缺陷因渗入SiC基体而被填充,缺陷消失;原预制体内部无缺陷处,经过CVI致密化工艺后产生新的孔洞缺陷,说明利用红外热成像技术可以追踪材料内部孔洞缺陷的遗传性;三维针刺密度梯度纤维预制体CVI沉积SiC前后,密度梯度发生逆转变化.
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