在硅衬底上利用电子束蒸发沉积了TiO_2薄膜,利用椭圆偏振仪测量了不同沉积温度下的TiO_2薄膜的折射率,发现其折射率随着沉积温度的升高而升高.利用X射线衍射(XRD)仪对这些薄膜的结构进行表征,发现折射率高的样品其结晶化程度也高.利用X射线光电子能谱(XPS)和傅立叶红外吸收谱(FT-IR)相结合的方法对薄膜的成分进行分析,发现内部存在低价态的钛氧化物,使薄膜的折射率明显低于固体块材料的折射率.
In this work TiO_2 films were prepared on silicon substrates by electron beam evaporation, and the refractive index of the films deposited at different temperature, were measured by ellipsometry. The results revealed that the refractive index was improved as increasing the deposition temperature. The structure and composition were characterized by XRD, XPS and FI-IR respectively. The XRD confirmed that the improvement of the refractive index is result from the improvement of the crystallization. And the XPS and Fi-IR confirmed that the refractive index is lower than that of bulk TiO_2 due to the presence of non-stoichiometry of TiO_((2-x)) and SiO_((2-x)).
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