GaN基相关材料的量子点生长是半导体材料研究的一个热点,尤其是用MOCVD方法生长GaN基自组装量子点占了相当的比例,因此相关的文献较多,但综述性文章却不多见.鉴于此,本文综述了用MOCVD法制备GaN基量子点的不同实验方法,并对影响量子点生长的实验条件和参数做了简要的分析.希望能够对相关的实验研究工作提供一些参考.
参考文献
| [1] | Wang Zhan-Guo;Chen Yong-Hfai;Liu Feng-Qi .Self-assembled quantum dots, wires and quantum-dot lasers[J].Journal of Crystal Growth,2001(0):1132-1139. |
| [2] | Liang J;Suo Z .[J].Applied Physics Letters,2001,79:251. |
| [3] | Liu G R;Quek Jerry S S .[J].Semicond Sci Technol,2002,17(06):630. |
| [4] | Korutcheva E;Turiel A M;Markov I .[J].Physical Review,2000,B61:16890. |
| [5] | Qhalid Farccd R S et al.[J].Materials Chemistry and Physics,2000,64:360. |
| [6] | Satoru Tanaka et al.[J].Applied Physics Letters,1996,69:4096. |
| [7] | Hideki Hirayama;Satoru Tanaka;Peter Ramvall .Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AIGaN surfaces[J].Applied physics letters,1998(13/18):1736-1738. |
| [8] | Hirayama H et al.[J].MRS Internet Journal of Nitride Semiconductor Research,1999,4(zk):4. |
| [9] | 陈鹏,沈波,王牧,周玉刚,陈志忠,臧岚,刘小勇,黄振春,郑有,闵乃本,杭寅.MOCVD两步生长法制备GaN量子点[J].高技术通讯,1998(06):5-8. |
| [10] | Miyamura M;Tachibana K;Arakawa Y .[J].Applied Physics Letters,2002,80:3937. |
| [11] | Tachibana K;Someya T;Werner R et al.[J].Physica,2000,E7:994. |
| [12] | Yasuyuki Kobayashi et al.[J].Journal of Crystal Growth,2002,243:103. |
| [13] | He J;Xu B;Wang Z G et al.[J].Journal of Crystal Growth,2002,240:395. |
| [14] | Tachibana K;Someya T;Werner R et al.[J].Applied Physics Letters,1999,74:383. |
| [15] | Meng X Q;Xu B;Jin P et al.[J].Journal of Crystal Growth,2002,243:432. |
| [16] | Chen Zhen;Lu Dacheng;Han Peide et al.[J].Journal of Crystal Growth,2002,243:19. |
| [17] | Scholz F.;Sohmer A.;Syganow V.;Dornen A.;Ambacher O.;Off J. .MOVPE of GaInN heterostructures and quantum wells[J].Journal of Crystal Growth,1998(0):8-12. |
| [18] | Hyun JinKim;Hyunseok Na et al.[J].Journal of Crystal Growth,2004,269:95. |
| [19] | Ji Liangwen;Su Yankuin et al.[J].Materials Letters,2003,57:4218. |
| [20] | Tu K N;Mayer J W;Feldman L C.Electronic Thin Film Science[M].New York:Macmillan,1992 |
| [21] | 王三胜,顾彪,徐茵,徐久军,秦福文,杨大智.ECR-PEMOCVD法在GaAs（001）衬底上制备GaN量子点[J].半导体光电,2002(02):114-117. |
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