使用超高真空化学气相淀积(UHV/CVD)设备在Si衬底上生长多层Ge量子点,用双晶X射线衍射(DCXRD)、拉曼光谱(Raman)等手段表征在不同条件下快速热退火的Ge量子点材料的组分、应力等特性,研究了快速热退火对多层Ge量子点晶体质量的影响.结果表明:随着退火温度的升高,量子点中Ge的组分下降,量子点应变的弛豫程度加剧.在1000℃退火20 s后,量子点材料已经完全弛豫.
参考文献
| [1] | HUANG Changjun,The study of self-assembled Ge quantum dots in Ge/Si multilayer structure,Ph.D.Dissertation,Institute of Semiconductors,Chinese Academy of Sciences(2002)(黄昌俊,Ge/Si材料系自组装Ge量子点研究,博士学位论文,中国科学院半导体研究所(2002)) |
| [2] | D.J.Eaglesham, M.Cerullo, Dislocation-free Stranski-Krastanow growth of Ge on Si(100),Physical Review Letters,64(16),1943(1990) |
| [3] | S.Tong,J.L.Liu,J.Wan,K.L.Wang,Normal-incidence Ge quantum-dot photodetectors at 1.5μm based on Si substrate,Applied Physics Letters,80(7),1189(2002) |
| [4] | J.L.Liu,W.G.Wu,A.Balandin,G.L.Jin,K.L.Wang,Intersubband absorption in boron-doped multiple Ge quantum dots,Applied Physics Letters,74(2),185(1999) |
| [5] | A.I.Yakimov, A.V.Dvurechenskii, Y.Y.Proskuryakov,A.I.Nikiforov, O.P.Pchelyakov, S.A.Teys,A.K.Gutakovskii, Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots,Applied Physics Letters,75(10),1413 (1999) |
| [6] | C.Miesner,O.R(o)thig,K.Brunner,G.Abstreiter,Intravalence band photocurrent spectroscopy of self-assembled Ge dots in Si,Applied Physics Letters,76(8),1027(2000) |
| [7] | C.Li, Q.Q.Yang, Y.H.Cheng, H.J.Wang, J.Z.Wang,J.Z.Yu,Q.M.Wang,A study of Si1-xGex/Si quantum well intermixing by photocurrent spectroscopy,Thin Solid Films,359(2),236(2000) |
| [8] | SHI Wenhua,The study of Ge/Si nano-islands and device,Ph.D.Dissertation,Institute of Semiconductors,Chinese Academy of Sciences(2007)(时文华,Ge/Si纳米岛材料与器件研究,博士学位论文,中国科学院半导体研究所(2007)) |
| [9] | X.Liu,D.Huang,Z.Jiang,X.Wang,Interface broadening and Raman scattering in Si1-x Gex/Si superlattices,Physical Review B,53(8),4699(1996) |
| [10] | P.Boucaud, L.Wu, C.Guedj, F.H.Julien, I.Sajnes,Y.Campidelli,L.Garchery,Photoluminescence and intersubband absorption spectroscopy of interdiffused Si/SiGe quantum wells, Journal of Applied Physics, 80(3),1414(1996) |
| [11] | J.Y.Yao, T.G..Anderson, G.L.Duniop, The interfacial morphology of strained epitaxial InxGa1-xAs/GaAs,Journal of Applied Physics,69(4),2224(1991) |
| [12] | Z.Pan,Y.T.Wang,Y.Zhuang,Y.W.Lin,Z.Q.Zhou,L.H.Li,R.H.Wu,Q.M.Wang,Investigation of periodicity fluctuations in strained (GaNAs)1(GaAs)m superlattices by the kinematical simulation of x-ray diffraction,Applied Physics Letters,75(2),223(1999) |
| [13] | J.Wan,Y.H.Luo,Z.M.Jiang,J.Wan,Y.H.Luo,Z.M.Jiang,G.Jin,J.L.Liu,K.L.Wang,X.Z.Liao,J.Zou,Ge/Si interdiffusion in the GeSi dots and wetting layers,Journal of Applied Physics,90(8),4290(2001) |
| [14] | M.A.Renucci,J.B.Renucci,M.Cardona,in:Proceeding of the Second International Conference on Light Scattering in Solids,Raman Scattering in Ge-Si Alloys,edited by M.Balkanski (Paris,Flammarion,1971) p.326 |
| [15] | J.C.Tsang,P.M.Mooney, F.Dacol,J.O.Chu, Measurements of alloy composition and strain in thin GexSi1-x layers,Journal of Applied Physics,75(12),8098(1994) |
| [16] | P.H.Tan,K.Brunner,D.Bougeard,G.Abstreiter,Raman characterization of strain and composition in small-sized self-assembled Si/Ge dots,Physical Review B,68(12),125302(2003) |
| [17] | Q.J.Cai,H.Zhou,F.Lu,The effects of thermal annealing in self-assembled Ge/Si quantum dots,Applied Surface Science,253(10),4792(2007) |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%