封装石英管真空熔炼合成CuIn0.7Ga0.3Se2(CIGS)块体,再采用电子束蒸镀此块体,制备用于太阳电池吸收层的CIGS薄膜,然后对薄膜进行不同温度的真空退火处理.分别采用XRD、EDS、SEM及光谱分析等方法,研究CIGS块体和退火薄膜的表面形貌、晶体结构、成分或者光电性能.结果表明:在1200℃、保温2h后,采用真空熔炼获得结晶性能较好、单一黄铜矿结构的CuIn0.7Ga0.3Se2块体.随着退火温度的升高,薄膜中In-Se杂质相分解,从而获得单一相的CIGS薄膜;并且颗粒不断长大,达到1.0～3.5 μm;成分和光学禁带不断得到优化.600℃退火薄膜是比较符合理想太阳电池要求的吸收层材料.
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