以水合乙酸锌、水合乙酸锰为前驱体，利用溶胶-凝胶旋涂法在p+-Si衬底上制备Mn掺杂的ZnO阻变薄膜（MZO）。研究工艺中预热处理温度对薄膜的微观结构、阻变特性的影响，分析了薄膜高阻态和低阻态的导电机理。结果表明：经250、300℃预热处理的MZO薄膜孔洞较多，而经350℃预热处理的MZO薄膜致密，无孔洞且呈c轴择优取向生长；经不同温度预热处理所制备的Ag/MZO/p+-Si器件均呈双极性的阻变特性，但经350℃预热处理的器件样品具有更显著的阻变行为和更高的高、低电阻比RHRS/RLRS（104~106）；器件在高阻态的低压区为欧姆导电，高阻态高压区为肖特基发射电流传导，在低阻态为空间电荷限制电流（SCLC）传导。
Mn?doped ZnO(MZO)films were deposited on p+?Si substrates by sol?gel method with zinc acetate hydrate and manganese acetate hydrate as precursor. The microstructures and resistive switching properties of MZO films pre?heated at various temperatures were investigated,and the conduction mechanism was studied. The results indicate that the films pre?heated at 250℃and 300℃show more holes,while the films pre?heated at 350℃are dense,free of holes and c?axis preferred orientation. Bipolar resistive behaviors are observed in Ag/MZO/p+?Si devices at different pre?heating temperature. The device pre?heated at 350℃shows an obvious and larger high/low resistance ratio of 104?106. The conduction process of the Ag/MZO/p+?Si devices in the high resistance state is controlled by Ohmic conduction at low voltage,and dominated by Schottky emission conduction at high voltage. However,the conduction process is caused by Space current limited conduction in low resistance state.
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