硅中的氧化诱生层错(OsF)是一种重要的工艺诱生缺陷,会对微电子器件产生重大影响,为提高硅片质量.要求对OSF有充分了解.综述了氧化诱生层错的研究进展,着重讨论了 OSF的形成动力学、影响因素和检测方法.并指出:OSF是一种由点缺陷行为决定的工艺诱生缺陷.
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