采用原位粉末装管技术(in-situ PIT)制备了萘(C10H8)掺杂MgB2/Nb/Cu线材.前驱粉末按照MgB2+xwt％ (x=0,2,5,8)的比例将Mg粉、B粉和C10H8粉末混合研磨,装入Cu/Nb复合管中,分别拉拔加工至φ2.0 mm和φ1.0 mun,然后Ar气氛中分别在650,700,750℃热处理,保温2.5 h.通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)和能谱仪(EDS)等测试手段分析了样品的相结构和微观结构等.结果发现,样品超导转变温度Tc不随萘掺杂量的变化而变化,但正常态电阻有所降低.在20和25K无外磁场时,x=8样品的临界电流密度分别达到1.1×105和3.8× 104 A/cm2,而x=5样品也达到3.1×104和1.2× 104 A/cm2.
C10H8-doped MgB2 wires were fabricated by in-situ PIT (Powder in Tube) method.The Nb/Cu rube was filled with the uniformly mixed precursor powders of magnesium,boron and C10H8 with the stoichiometry of MgB2+xwt％C10H8,where x=0,2,5,8and drawn to diameter φ2 mm and φ1 mam,respectively,and then heat treated in argon atmosphere at three different temperatures (650,700,750 ℃) for 2.5 h.The phase formation and microstructures of the samples were analyzed by X-ray diffraction (XRD),scanning electron microscopy (SEM),and so on.It is found that the critical transition temperature (Tc) changes little with increasing of C10H8 doping content,while normal resistance decreases to some degree.At 20,25 K and in zero external field,the critical current density (Jc) the sample of x=8 achieves 1.1 × 105 and 3.8× 104 A/cm2,respectively,and the Jc of the sample of x=5 reaches 3.1 × 104and 1.2× 104 A/cm2,respectively.
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