利用离子束增强沉积工艺,在硅基片上制备Si3N4/Si多层红外干涉滤波薄膜结果表明,N2+N的辅助轰击对于合成接近化学配比的Si3N4薄膜起了关键作用薄膜的折射率可达1.74～1.84实验测得的多层滤波薄膜的红外反射谱与理论值相当接近
Infrared filter was fabricated by ion beam assisted deposition of Si3N4/ Si films on the Si substrate. The experiments found that the N2+N+ ion assisted bom-bardment is the key of synthesis Si3N4 films. Strong peaks were found in the infrared reflection s
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