采用脉冲磁控溅射法制备氢化微晶硅薄膜,利用X射线衍射、拉曼光谱、扫描电子显微镜和四探针测试仪对薄膜结构和电学性能进行表征和测试,研究了衬底温度、氢气稀释浓度和溅射功率对硅薄膜结构和性能的影响.结果表明:在一定范围内,通过控制合适的衬底温度、增大氢气稀释浓度及提高溅射功率,可以制备高质量的微晶硅薄膜.在衬底温度为400℃、氢气稀释浓度为90％及溅射功率为180W的条件下制备的微晶硅薄膜,其晶化率为72.2％,沉积速率为0.48nm/s.
参考文献
| [1] | Stabler D L;Wrongski C R .Reversible conductivity changes in discharge-produced amorphous Si[J].Applied Physics Letters,1977,31(04):292. |
| [2] | I. Torres;R. Barrio;J.D. Santos;N. Gonzalez;J. J. Gandia .Effect of radio frequency power and total mass-flow rate on the properties of microcrystalline silicon films prepared by helium-diluted-silane glow discharge[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2010(23):7019-7023. |
| [3] | Guo, L.;Ding, J.;Yang, J.;Ling, Z.;Cheng, G.;Yuan, N.;Wang, S. .Nanostructure, electrical and optical properties of p-type hydrogenated nanocrystalline silicon films[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2010(6):649-653. |
| [4] | E. Fathi;Y. Vygranenko;M. Vieira;A. Sazonov .Boron-doped nanocrystalline silicon thin films for solar cells[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2011(21):8901-8905. |
| [5] | Lee, SY;Ahn, SW;Lee, HM .Surface morphology evolution of microcrystalline silicon p-layer prepared by RF-PECVD[J].Current applied physics: the official journal of the Korean Physical Society,2010(Suppl.2):S230-S233. |
| [6] | Jung MJ.;Jung YM.;Shaginyan LR.;Han JG. .Polycrystalline Si thin film growth on glass using pulsed d.c. magnetron sputtering[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(0):429-432. |
| [7] | Fukaya K;Tabata A;Mizutani T .Influence of target direct current bias voltage on the film structure of hydrogenated microcrystalline silicon prepared by direct current-radiofrequency coupled magnetron sputtering[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2005(1/2):132-136. |
| [8] | A. Ben Abdelmoumen;R. Cherfi;M. Kechoune;M. Aoucher .Hydrogenated Amorphous Silicon Deposited By Pulsed Dc Magnetron Sputtering. Deposition Temperature Effect[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2008(1):369-371. |
| [9] | Voutsas A T;Hatalis M K;Boyce J et al.Raman spectroscopy of amorphous and microcrystalline silicon films deposited by low-pressure chemical vapor deposition[J].Journal of Applied Physics,1995,78(12):6999. |
| [10] | Dirani EAT.;Noda LK.;Fonseca FJ.;Santos PS.;Andrade AM. .Effect of the substrate on the structural properties of low temperature microcrystalline silicon films - a Raman spectroscopy and atomic force microscopy investigation[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2000(1/3):307-313. |
| [11] | Paillard V.;Puech P.;Cabarrocas PRI. .Measurement of stress gradients in hydrogenated microcrystalline silicon thin films using Raman spectroscopy[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2002(Pt.1):280-283. |
| [12] | 陈永生,郜小勇,杨仕娥,卢景霄,谷锦华.沉积温度对微晶硅薄膜结构特性的影响[J].物理学报,2007(07):4122-4126. |
| [13] | 何宇亮;陈光华;张仿清.非晶态半导体物理学[M].北京:高等教育出版社,1989:13. |
| [14] | Tsai C C;Anderson G B;Thompson R et al.Control of silicon network structure in plasma deposition[J].Journal of Non-Crystalline Solids,1989,114(01):151. |
| [15] | Huang J J;Hsien H C;Tsai C J et al.Method for forming a microcrystalline silicon film[P].US,20090029532A1,2009-01-29. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%