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The effect of the dielectric mismatch between the well and the barrier materials on the binding energies of shallow donor has been investigated in Inx Ga1-xAs/GaAsstrained quantum well. The binding energies as a function of the well widths and impurity positions in the well and the barriers are obtained by using a variational method. Calculation results show that the effect of the dielectric mismatch is quite sizable and such effect is larger for off-center impurity positions,but the effect of the lattice mismatch is small in general.

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