以无水四氯化锆为锆源,正硅酸乙酯(TEOS)为硅源,氟化锂为矿化剂,乙醇为溶剂,氟化锆为生长助剂,采用非水解溶胶-凝胶法于800℃制备出硅酸锆晶须,借助XRD、SEM和TEM等测试手段研究了热处理气氛、氟化锂用量、氟化锆的引入方式等工艺因素对硅酸锆晶须形成的影响.结果表明:与空气气氛相比,氮气气氛更加有利于硅酸锆晶体的一维择优生长;矿化剂用量过多或过少均不利于晶须的形成;氟化锆以外置的方式引入能获得直径为0.2～0.4μm,长径比达15 ～30,沿c轴方向择优生长的硅酸锆晶须.
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