采用湿化学法在Si衬底上生长了纳米棒结构的Co掺杂ZnO薄膜,并研究了掺杂浓度对生成样品结构和性能的影响.研究表明这种湿化学法成本低廉、收益高、重复性良好.样品的XRD结果表明掺杂的ZnO没有出现杂相.SEM结果表明掺杂样品是由ZnO纳米棒团簇结构组成,且团簇的密度随着Co掺杂浓度的增大而增大.薄膜的光致发光光谱结果表明Co掺杂导致薄膜的带隙发生红移,同时也证明了Co原子有效地进入了ZnO晶格.
Co-doped ZnO films with nanorod structures were fabricated on Si substrates by a simple wet chemical method, the influence of the dopant concentration on the structure and properties of obtained reaction products were studied. The wet chemical method was proved to be a repeatable, low-cost and high-yield route to synthesis Co-doped ZnO nanocrystals. XRD patterns demonstrate the absence of other impurity phases. SEM measurements show that clusters of ZnO nanorods have been obtained and the nanorods density grows larger as the doped concentration increasesing. The photoluminescence spectra of the films indicate that the co-doping cause the red-shift ,Co ions have doped into the ZnO crystal lattice successfully.
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