采用电沉积法,在柔性不锈钢网基底上制备了ZnO纳米棒阵列,随后旋涂P25浆料,最终经退火后得到了ZnO纳米棒阵列/TiO2纳米粒子的复合结构薄膜,详细探讨了TiO2纳米粒子的填充,初级ZnO纳米棒阵列的形貌,P25浆料的旋涂次数以及表面活性剂PEG添加量等制备条件对复合结构光阳极形貌及光电性能的影响.研究表明:TiO2纳米粒子的引入能有效提高光阳极的比表面积,增强半导体与染料的耦合能力,ZnO纳米棒阵列能够为电子提供快速传输的通道.最佳制备条件为:初级ZnO纳米棒沉积次数为两次,浆料浓度为1 g/50 mL,旋涂浆料次数为三次,PEG添加量为4g/100 mL,制备的复合结构DSSC的光电转换效率较单一纳米棒阵列有一定的提高.
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