(K,Na) NbO3基无铅压电薄膜的制备与表征

低温物理学报 , 2015, 37(1): 14-18.

(K,Na) NbO3基无铅压电薄膜的制备与表征

李元行 ^1, , 陈峰 ^2, , 高关胤 ^3, , 徐浩然 ^4, , 吴文彬 ^5,

1.合肥微尺度物质科学国家实验室,中国科学技术大学,合肥230026;强磁场实验室,中国科学院,合肥230031

2.强磁场实验室,中国科学院,合肥230031

3.合肥微尺度物质科学国家实验室,中国科学技术大学,合肥230026

4.合肥微尺度物质科学国家实验室,中国科学技术大学,合肥230026

5.合肥微尺度物质科学国家实验室,中国科学技术大学,合肥230026

基金项目: 国家自然科学基金(批准号:11074237,11274287,11204313),国家973项目(批准号:2009CB929502,2012CB927402)资助的课题.Project supported by the NSF of China (Grant Nos.11074237,11274287,11204313),and the National Basic Research Program of China (Grant Nos.2009CB929502,2012CB927402).

关键词：无铅压电 , 铌酸钾钠 , 外延薄膜 , 介电性质

FABRICATION AND CHARACTERIZATION OF (K, Na) NbO3-BASED LEAD FREE PIEZOELECTRIC THIN FILM

Keywords： lead-free piezoelectrics , potassium-sodium niobate , epitaxial film , dielectric properties

我们采用脉冲激光沉积法,在SrTiO3(001)衬底上以La0.7Sr0.3 MnO3作为底电极,制备得单相的0.95(Na0.49K0.49Li0.02) (Nb0.8Ta0.2)-0.05CaZrO3外延薄膜.采用X射线衍射、X射线光电子能谱,电滞回线和介电常数测试分别表征了LKNNT-CZ薄膜的微观结构、表面元素价态和铁电/介电性能.结果表明:(1)制备得到的LKNNT-CZ薄膜的元素组成与靶材相同;(2)在4伏到10伏内均可以获得线型良好且饱和的电滞回线,当驱动电压为10V时,薄膜的剩余极化达到12.4 μC/cm2,矫顽电场为102.3 kV/cm;(3)薄膜在1 kHz频率下的介电常数高达1185.

参考文献

[1]	Jian Fu;Ruzhong Zuo;S. C. Wu;J. Z. Jiang;L. Li;T. Y. Yang;Xiaohui Wang;Longtu Li .Electric field induced intermediate phase and polarization rotation path in alkaline niobate based piezoceramics close to the rhombohedral and tetragonal phase boundary[J].Applied physics letters,2012(12):122902-1-122902-5.
[2]	Ngeah Theng Chua;Lu You;Jan Ma;Junling Wang .Properties of (K,Na)NbO_3-based lead-free piezoelectric films prepared by pulsed laser deposition[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2010(23):6777-6780.
[3]	Y.B. Yao;H.T. Chan;C.L. Mak;K.H. Wong .Phase transitions and optical characterization of lead-free piezoelectric (K_(0.5)Na_(0.5))_(0.96)Li_(0.04)(Nb_(0.8)Ta_(0.2))O_3 thin films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2013(Jun.30):156-162.
[4]	C. Thiele;K. Dorr;L. Schultz;E. Beyreuther;W.-M. Lin .Piezoelectrically induced resistance modulations in La_(0.7)Sr_(0.3)MnO_(3)/Pb(Zr,Ti)O_(3) field effect devices[J].Applied physics letters,2005(16):162512-1-162512-3-0.
[5]	Feng Chen;Q. Z. Liu;H. F. Wang;F. H. Zhang;Wenbin Wu .Polarization switching and fatigue in Pb(Zr_(0.52)Ti_(0.48))O_(3) films sandwiched by oxide electrodes with different carrier types[J].Applied physics letters,2007(19):192907-1-192907-3-0.
[6]	Jin SW;Gao GY;Wu WB;Zhou XY .Effect of angular-distortion-induced strain on structural and transport properties of epitaxial La0.7Sr0.3MnO3 thin films[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2007(26):305-309.
[7]	M. Abazari;E. K. Akdogan;A. Safari .Effect of manganese doping on remnant polarization and leakage current in (K_(0.44),Na_(0.52),Li_(0.04))(Nb_(0.84),Ta_(0.10),Sb_(0.06))O_(3) epitaxial thin films on SrTiO_(3)[J].Applied physics letters,2008(21):212903-1-212903-3-0.
[8]	M. Abazari;A. Safari .Effects of doping on ferroelectric properties and leakage current behavior of KNN-LT-LS thin films on SrTiO_(3) substrate[J].Journal of Applied Physics,2009(9):094101-1-094101-5.

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