氮化镓材料中的位错是制约GaN发光器件及电子器件的性能的一个关键因素.目前对于氮化镓材料中的位错的研究是一大热点.扼要综述了位错对于材料及器件的物理性能的影响:非辐射复合作用、造成器件的漏电流、缩短器件的寿命.并简要介绍了减少GaN外延层中的位错密度的几种方法.
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