建立了Si(100)-(2×1)表面上Si薄膜生长的Kinetic Monte Carlo(KMC)模型,并对薄膜生长的初始阶段进行了研究.结果表明:在一定的入射率下存在一最佳成岛温度,该温度随入射率的增大而升高,并满足函数关系T=T0+bln(F+c).
参考文献
| [1] | Shi J;Qin X R .[J].Physical Review Letters,2006,73(12):121303. |
| [2] | 汪雷,唐景昌,杨德仁,王学森,胡艳芳.硅、锗材料在Si（100）表面的生长研究[J].真空科学与技术学报,2002(02):104-106,111. |
| [3] | Qin XR;Lagally MG .[J].Science,1997,278(11):1444. |
| [4] | MoY W;Kleiner J;Webb M B et al.[J].Physical Review Letters,1991,66(15):1998. |
| [5] | Bowler DR .[J].Physical Review B,2003,67(11):115341. |
| [6] | Brocks G et al.[J].Physical Review Letters,1991,66(13):1729. |
| [7] | Valipa M S et al.[J].Physical Review Letters,2005,95(21):21610. |
| [8] | Hensel H.;Urbassek HM. .Simulation of the influence of energetic atoms on Si homoepitaxial growth[J].Physical Review.B.Condensed Matter,1998(4):2050-2054. |
| [9] | Ishii A;Yamazoe J;Aisaka T .The simulation study for the nanometer-scale selective growth of Si islands on Si(001) windows in ultrathin SiO2 films[J].Physica, E. Low-dimensional systems & nanostructures,2004(2/4):578-582. |
| [10] | Akis R.;Ferry DK.;Musgrave CB. .Kinetic lattice Monte Carlo simulations of processes on the silicon (100) surface[J].Physica, E. Low-dimensional systems & nanostructures,2003(1/2):183-187. |
| [11] | 王培林,丁天骅,蔡珣.超薄晶体膜生长过程的计算机模拟[J].物理学报,2002(09):2109-2112. |
| [12] | Iguain JL.;Aldao CM.;Martin HO. .MODEL FOR DIFFUSION AND GROWTH OF SILICON ON SI(100) WITH INEQUIVALENT SITES IN A SQUARE LATTICE[J].Physical Review.B.Condensed Matter,1996(12):8751-8755. |
| [13] | Kersulis S;Mitin V .[J].Materials Science and Engineering B:Solid State Materials for Advanced Technology,1995,29(1-3):34. |
| [14] | Levine SW.;Clancy P.;Engstrom JR. .A kinetic Monte Carlo study of the growth of Si on Si(100) at varying angles of incident deposition[J].Surface Science: A Journal Devoted to the Physics and Chemistry of Interfaces,1998(1):112-123. |
| [15] | 王恩哥.薄膜生长中的表面动力学（Ⅰ）[J].物理学进展,2003(01):1-61. |
| [16] | Zhong J X;Zhang T J;Zhang Z Y et al.[J].Physical Review B:Condensed Matter,2001,63(11):113403. |
| [17] | Toyoshima S;Kawamura T;Nishida S;Ichimiya A .Surface diffusion during decay of nano-island on Si(100) at high temperature[J].Surface Science: A Journal Devoted to the Physics and Chemistry of Interfaces,2004(1):84-92. |
| [18] | 郑小平,张佩峰,贺德衍,刘军,马健泰.薄膜外延生长及其岛核形成的计算机模拟[J].中国科学G辑,2004(02):131-140. |
| [19] | Markov V A;Pchelyakov O P;Sokolov L V et al.[J].Surface Science,1991,250:229. |
| [20] | Rosenfeld G et al.[J].Physical Review Letters,1993,71:895. |
| [21] | Jorke H;Herzog H J;Kibbel H .[J].Physical Review B:Condensed Matter,1989,40(03):2005. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%