使用射频磁控溅射系统在恒定溅射功率、Ar气压和Ar气流流量下,在Si(100)衬底上,分别沉积不同厚度的Ca膜.随后,800℃真空退火45分钟、1小时和1.5小时.半导体钙硅化物,即立方相的Ca2Si膜和简单正交相的Ca2Si膜首次、单独、直接生长在Si(100)衬底上.实验结果指明在多相共生的Ca-Si化合物中,Ca膜的沉积厚度,因溅射而生长的Ca-Si化合物的生长厚度决定了某一个单相的钙硅化物独立的生长.另外,退火温度为800℃时,有利于单相钙硅化物的独立生长.并且,退火时间也是关键因素.
Ca films with different thickness, were deposited directly on Si(100) substrates by using a radio frequency (R. F.) magnetron sputtering system (MS) and then were annealed at 800℃ for 45min, 60min and 90min in a vacuum furnace for interdiffusing the deposited ions, atoms and clusters and Si atoms. The structural and morphological features of the films were tested by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and energy dispersive analysis of X-rays (EDAX). The cubic Ca2Si and the orthorhombic Ca2Si were grown directly and individually on Si(100) substrates for the first time. The experimental results indicate that the selective growth of a single phase Ca-silicide depends on the growth thickness and depositing thickness by sputtering. Besides, 800"C is the adaptive annealing temperature for growing Ca2Si films. Additionally, annealing time is also a principal factor for growing Ca2Si films.
参考文献
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