利用金属元素钯作催化剂,采用磁控溅射后氨化法,成功的在Sapphire衬底上制备出GaN纳米线.X射线衍射和X射线光电子能谱研究显示合成的纳米线具有六方纤锌矿GaN结构.通过扫描电子显微镜,透射电子显微镜和高分辨透射电子显微镜观察分析得出GaN纳米线为单晶结构,其纳米线的直径约为10～60nm,长度达几十个微米.室温下以325nm波长的光激发样品表面,发现GaN带边发光峰有较弱的蓝移.最后简单讨论了GaN纳米线的生长机制.
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