本文综述了光化学气相沉积(Photo-CVD)法分解硅烷(SiH_4、Si_2H_6)制备非晶硅(a-Si)膜的简单原理、a-Si 膜的性质、a-Si 和微晶硅(μc-Si)太阳电池的光伏特性。也介绍了a-Si 和μc-Si 太阳电池制备技术和发展现状。并指出Photo-CVD 法是制备高转换效率(η)太阳电池很有希望的一种方法。
In this paper,the brief principle of amorphous silicon(a-Si)films fab-ricatedby the photochemical vapor deposition using decomposition of monosilaneand disilane is reviewed.The electrical and optical properties of a-Si filmsand the photovoltaic properties
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