合成了2-甲基-8-羟基喹啉镓配合物(Ga(mhq)3),通过红外光谱、氢核磁谱确认其结构,进一步通过紫外-可见吸收光谱、循环伏安曲线、荧光发射光谱和电致发光光谱表征了其光学带隙及发光性质.实验结果表明Ga(mhq)3紫外吸收峰在259和365nm处,由紫外吸收得到光学带隙为3.10eV.在四氢呋喃溶液中,416nm激发下,荧光发射峰在496nm,为蓝绿色荧光；在360nm波长的激发下,Ga(mhq)3粉末发射峰在472nm处,属蓝绿光发射.将其做成器件A:ITO/NPB(50nm)/Ga (mhq)3 (30nm)/LiF(1nm)/Al(100nm),得到最大亮度为901.5cd/m2,最大发射波长为508nm.加入电子传输层Alq3对器件A进行优化后,最大亮度达到4339cd/m2.
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